 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| IMZ4 Transistors General purpose transistor (dual transistors) IMZ4 Features 1) Includes a 2SA1036K and a 2SC411K transistor in a SMT package. 2) Mounting possible with SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) High collector current. IC=500mA 5) Mounting cost and area can be cut in half. External dimensions (Unit : mm) 2.90.2 1.90.2 0.95 0.95 (4) (5) (6) +0.2 -0.1 2.80.2 1.1+0.2 -0.1 0.80.1 0 to 0.1 (3) All terminals have same dimensions Equivalent circuit ROHM : SMT6 EIAJ : SC-74 Abbreviated symbol: Z4 (4) (5) (6) Tr1 Tr2 (3) (2) (1) Structure Epitaxial planar type NPN / PNP silicon transistor Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits Tr1 (NPN) 40 32 5 500 Tr2 (PNP) -40 -32 -5 -500 Unit V V V mA mW C C 300 (TOTAL) 150 -55 to +150 200mW per element must not be exceeded. Rev.A 1/4 0.3 to 0.6 (2) (1) +0.1 0.3-0.05 1.6 +0.1 0.15-0.06 IMZ4 Transistors Electrical characteristics (Ta=25C) Tr1 (NPN) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 40 32 5 - - - 120 - - Typ. - - - - - - - 250 6.5 Max. - - - 1.0 1.0 0.6 560 - - Unit V V V A A V - MHz pF IC=100A IC=1mA IE=100A VCB=20V VEB=4V Conditions IC/IB=500mA/50mA VCE=3V, IC=100mA VCE=5V, IE= -20mA, f=100MHz VCB=10V, IE=0A, f=1MHz Measured using pulse current. Tr2 (PNP) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. -40 -32 -5 - - - 120 - - Typ. - - - - - - - 200 7 Max. - - - -1.0 -1.0 -0.6 560 - - Unit V V V A A V - MHz pF IC= -100A IC= -1mA IE= -100A VCB= -20V VEB= -4V Conditions IC/IB= -300mA/-30mA VCE= -3V, IC= -100mA VCE= -5V, IE= 20mA, f= 100MHz VCB= -10V, IE= 0A, f= 1MHz Measured using pulse current. Packaging specifications Package Code Type EMZ1 UMZ1N IMZ1A Basic ordering unit (pieces) T2R 8000 Taping TR 3000 T108 3000 Rev.A 2/4 IMZ4 Transistors Electrical characteristic curves Tr1 (NPN) 50 VCE=6V COLLECTOR CURRENT : IC (mA) 100 Ta=25C COLLECTOR CURRENT : IC (mA) 20 10 5 COLLECTOR CURRENT : IC (mA) 0.50 mA A 0.45m A 0.40m 500 Ta=25C 0.35mA 400 0.30mA Ta=100C 25C -55C 0.25mA 50 300 2mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 2 1 0.20mA 0.15mA 0.10mA 200 0.6mA 0.4mA 0.5 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 100 0.05mA 0 0 0.2mA 0 0 1 2 3 1 2 3 IB=0A 4 5 IB=0A 4 5 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics ( ) Fig.3 Grounded emitter output characteristics ( ) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 1 1000 DC CURRENT GAIN : hFE 0.5 500 0.2 0.1 0.05 Ta=100C 75C 50C 100 25C 0C C 50 -25 C 0 -5 200 20 TRANSITION FREQUENCY : fT (MHz) Ta=25C lC/lB=10 VCE=3V 500 Ta=25C VCE=5V 200 100 50 0.02 0.5 1 2 5 10 20 50 100 200 500 1000 10 0.1 0.2 0.5 1 2 5 10 20 50 100 200 5001000 -0.5 -1 -2 -5 -10 -20 -50 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) Fig.4 Collector-emitter saturation voltage vs. collector current Fig.5 DC current gain vs. collector current Fig.6 Gain bandwidth product vs. emitter current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 50 Ta=25C f=1MHz IE=0A IC=0A Cib 20 10 Co b 5 2 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.A 3/4 IMZ4 Transistors Tr2 (PNP) -500 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) -100 -50 -20 -10 25C -55C COLLECTOR CURRENT : IC (mA) -200 Ta=100C VCE = -3V -100 Ta=25C -1mA -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA -0.4mA -0.3mA -0.2mA -0.1mA -500 Ta=25C -5.0mA -4.5mA -4.0mA -3.5mA -3.0mA -2.5mA -2.0mA -1.5mA -1.0mA -0.5mA -80 -400 -60 -300 -5 -2 -1 -0.5 -0.2 -0.1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.2 -40 -200 -20 -100 0 IB=0A 0 -1 -2 -3 -4 -5 0 IB=0A 0 -5 -10 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.8 Grounded emitter propagation characteristics Fig.9 Grounded emitter output characteristics ( ) Fig.10 Grounded emitter output characteristics ( ) 1000 Ta=25C 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE = -3V Ta=25C -1 -0.5 DC CURRENT GAIN : hFE VCE= -5V -3V -1V 200 DC CURRENT GAIN : hFE 500 500 Ta=100C 200 25C -0.2 -0.1 -0.05 100 100 -55C IC/IB=50 20 10 50 50 20 -1 -2 -5 -10 -20 -50 -100 -200 -500 -1000 20 -1 -2 -5 -10 -20 -50 -100 -200 -500 -1000 -0.02 -1 -2 -5 -10 -20 -50 -100 -200 -500 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.11 DC current gain vs. collector current ( ) Fig.12 DC current gain vs. collector current ( ) Fig.13 Collector-emitter saturation voltage vs. collector current ( ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) -1.0 -0.5 -0.3 -0.2 -0.1 TRANSITION FREQUENCY : fT (MHz) lC/lB=10 Ta=25C VCE = -5V 1000 500 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 100 50 Ta=25C f=1MHz IC=0A IE=0A Ta=100C 25C -0.05 - 55C -0.03 -0.02 -0.01 -1 200 100 50 0.5 1 2 5 10 20 50 20 10 5 -2 -5 -10 -20 -50 -100 -200 -500 -1000 2 -0.5 -1 -2 -5 -10 -20 -50 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.14 Collector-emitter saturation voltage vs. collector current ( ) Fig.15 Gain bandwidth product vs. emitter current Fig.16 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.A 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
Price & Availability of IMZ4
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |